Application of silicon carbide products in new energy
Silicon carbide (SIC) is a kind of widely used man-made material. Compared with Si devices, wide band gap semiconductor power devices represented by silicon carbide (SIC) have the advantages of higher voltage level, higher switching speed, higher junction temperature and lower switching loss. System advantages include maximum energy efficiency, faster operating frequency, higher power density, lower EMI, and reduced system size and cost.
SiC diodes such as 650V and 1200V, 32a ms2h32120g1 are examples. SiC has fast switching time, almost zero switching loss, and current is not affected by temperature, so it is very suitable for advanced solar power applications. Mepson SiC diode, which has passed the vehicle specification certification, has two voltage platforms of 650V and 1200V to choose from, and the current ranges from 2a to 60A.
The corresponding models are shown in the table below.